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KBL06 - bridge rec. 600V 4A
. 4A +AC-. ordercode:VpkVrms. KBL06600 Volt |
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MUR4100 - Si-D 1000V 4A/70Ap 75ns
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DIODE DE REDRESSEMENT 8A/700V
tension inverse de crête (Vrrm): 700Vcourant redressé moyen: 8Acourant de crête: 125Atension instantanée max. (8A, 100°C): 1.65Vcourant inverse max. (150°C): - 500µAtemps max. de recouvrement inverse: 35nsboîtier: TO220 |
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BYV26E - Si-D 1000V 1A/30Ap 75ns
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BYW29/200 - Si-D 200V 8A/80Ap 10ns
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BYW95C , Philips - Si-D 600V 3A/70Ap 250ns
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BYW98/200 , ST - Si-D 200V 3A/70Ap 35ns
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ES1F , Sanken - Si-D 1500V 0.5A/20Ap 1.5u
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MUR460 - Si-D 600V 4A/70Ap 50ns
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R2KN - si-d 140V 1A
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1N5335B - Diode Zener 5W 3V9
. ZENERDIODE 5W 3V9 |
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1N5338B - Diode Zener 5W 5V1
. ZENERDIODE 5W 5V1 |
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1N5342B - Diode Zener 5W 6V8
. ZENERDIODE 5W 6V8 |
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BAS11 - Si-D 300V 0.3A/4Ap 1us
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1N5348B - Diode Zener 5W 11V
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1N5372B - Diode Zener 5W 62V
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BA182 - C-D 35V 0.8-2.1pF vhf
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BY527 - Si-D 800V 2A/50Ap 2.5us
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BYV16 , TFK - Si-D 1000V 1.5A 300ns frc
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BYW56 - Si-D 1000V 2A/50Ap 2.5us
Diode. SI-D 1000V 2A/50Ap 2.5us. Boîtier: SOD57. |
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MUR420 , Motorola - Si-D 100V 4A 25ns frcr
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BYW100/200 - Si-D 200V 1.5A <35ns
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1N5344B - Diode Zener 5W 8V2
. ZENERDIODE 5W 8V2 |
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1N5347B - Diode Zener 5W 10V
. ZENERDIODE 5W 10V |
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1N5366B - Diode Zener 5W 39V
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1N5367B - Diode Zener 5W 43V
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1N5379B - Diode Zener 5W 110V
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BY500/1000 - Si-D 1000V 5A/200Ap 200ns
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1N5352B - Diode Zener 5W 15V
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1N5361B - Diode Zener 5W 27V
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1N5364B - Diode Zener 5W 33V
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1N5381B - Diode Zener 5W 130V
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1N5383B - Diode Zener 5W 150V
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9322.126.71673 - diode, power rectifier
Philips power rectifier diode BYT42M A. |
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1N5822 Diode 3A-40V
tension inverse de crête: 40Vcourant redressé max.: 3Acourant direct de crête répétitif: -courant inverse max. (25°C): 0.5Atension directe max.: -remarques: schottky - sur bobineboîtier: fig. 5 |
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6A2 Diode 6A-200V
tension inverse de crête: 200Vcourant redressé max.: 6Acourant direct de crête répétitif: -courant inverse max. (25°C): 10µAtension directe max.: 0.95Vremarques: sur bobineboîtier: fig. 6 |
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BB529 - C-D 28V 2.5-12pF 0r85 300
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BYV95C , Philips - Si-D 600V 1.5A/35Ap 250ns
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P600M - Si-D 1000V 6A/400Ap
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UF4003 - Si-D 200V 1A/50Ap 50ns
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UF5404 - Si-D 400V 3A/150Ap 50ns
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UF5408 - Si-D 1000V 3A/150Ap 75ns
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diode bzv55-b6V2
Philips reference diode BZV55-B6V2. |
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diode
. Diode |
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P600K - Si-D 800V 6A/400Ap
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1N5822, Sb-D 40V 3A/80Ap stky
. SB-D 40V 3A/80Ap STKY |
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RGP30M-DIO - Si-D 1000V 3A/125Ap 500ns
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diode bzv55-c5V1
. Type: BZV55. Power: 500 mWatt. Tolerance: BZV55C = 5%. Tolerance: BZV55F = 3%. Packaging: 10 pcs. ValueTypeOrdercode. 5V1BZV55-C5V1130.80884 |
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